IndiumV3, Russie, Analysis, bibRecord, 000130

ZnO-nanorod arrays for solar cells with extremely thin sulfidic absorber

Identifieur interne : 000130 ( Russie/Analysis ); précédent : 000129; suivant : 000131

ZnO-nanorod arrays for solar cells with extremely thin sulfidic absorber

Auteurs : RBID : Pascal:09-0415086

Descripteurs français

Pascal (Inist)
- Panneau solaire, Cellule solaire, Génération porteur charge, Etat interface, Recuit, Circuit ouvert, Courant court circuit, Nanobâtonnet, Oxyde de zinc, Sulfure d'indium.

English descriptors

KwdEn :
- Annealing, Charge carrier generation, Indium sulfide, Interface state, Nanorod, Open circuit, Photovoltaic array, Short circuit currents, Solar cell, Zinc oxide.

Abstract

Solar cells with an extremely thin sulfidic absorber have been prepared by spray ion layer gas reaction (ILGAR) of In₂S₃ on ZnO-nanorod arrays. As transparent hole conductor, CuSCN was deposited on the coated ZnO nanorods by impregnation. Surface photovoltage spectroscopy was applied to characterize states contributing to excess carrier generation and charge separation. The charge-selective contact is formed at the In₂S_3/CuSCN interface region the states of which also contribute significantly to the photocurrent. The influence of annealing temperature and annealing time of the In₂S_3/CuSCN contact region on the open-circuit potential (V_oc), short-circuit current (i_sc) and fill factor (FF) was studied in detail. For solar cells based on ZnO-nanorod arrays (rod length 1.5 μm), efficiency of 2.8% is obtained at AM1.5.

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Links to Exploration step

Pascal:09-0415086

Le document en format XML

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<seriesStmt><idno type="ISSN">0927-0248</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Charge carrier generation</term>
<term>Indium sulfide</term>
<term>Interface state</term>
<term>Nanorod</term>
<term>Open circuit</term>
<term>Photovoltaic array</term>
<term>Short circuit currents</term>
<term>Solar cell</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Panneau solaire</term>
<term>Cellule solaire</term>
<term>Génération porteur charge</term>
<term>Etat interface</term>
<term>Recuit</term>
<term>Circuit ouvert</term>
<term>Courant court circuit</term>
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<front><div type="abstract" xml:lang="en">Solar cells with an extremely thin sulfidic absorber have been prepared by spray ion layer gas reaction (ILGAR) of In<sub>2</sub>
S<sub>3</sub>
 on ZnO-nanorod arrays. As transparent hole conductor, CuSCN was deposited on the coated ZnO nanorods by impregnation. Surface photovoltage spectroscopy was applied to characterize states contributing to excess carrier generation and charge separation. The charge-selective contact is formed at the In<sub>2</sub>
S<sub>3/</sub>
CuSCN interface region the states of which also contribute significantly to the photocurrent. The influence of annealing temperature and annealing time of the In<sub>2</sub>
S<sub>3/</sub>
CuSCN contact region on the open-circuit potential (V<sub>oc</sub>
), short-circuit current (i<sub>sc</sub>
) and fill factor (FF) was studied in detail. For solar cells based on ZnO-nanorod arrays (rod length 1.5 μm), efficiency of 2.8% is obtained at AM1.5.</div>
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S<sub>3/</sub>
CuSCN interface region the states of which also contribute significantly to the photocurrent. The influence of annealing temperature and annealing time of the In<sub>2</sub>
S<sub>3/</sub>
CuSCN contact region on the open-circuit potential (V<sub>oc</sub>
), short-circuit current (i<sub>sc</sub>
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ZnO-nanorod arrays for solar cells with extremely thin sulfidic absorber

ZnO-nanorod arrays for solar cells with extremely thin sulfidic absorber

Descripteurs français

English descriptors

Abstract

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